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FDY102PZ - ON Semiconductor

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Kynix Teil #: KY13-FDY102PZ

Hersteller Teil #: FDY102PZ

Produktkategorie: Transistors - FETs, MOSFETs - Single

Hersteller: ON Semiconductor

Beschreibung: MOSFET P-CH 20V 0.83A SC89-3

Verpackung: SC-89, SOT-490

Menge:

Bleifrei-Status / RoHS-Status: Bleifrei / RoHS-konform

Vorlaufzeit: 3(168 Hours)

Datenblatt: datasheet

FDY102PZ Datenblatt

Attribute

Attribute Value

Lifecycle Status

ACTIVE (Last Updated: 22 hours ago)

Factory Lead Time

8 Weeks

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SC-89, SOT-490

Number of Pins

Weight

30mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

830mA Ta

Drive Voltage (Max Rds On, Min Rds On)

1.5V 4.5V

Number of Elements

Power Dissipation (Max)

625mW Ta

Turn Off Delay Time

23 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Series

PowerTrench®

Published

2010

JESD-609 Code

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

500MOhm

Terminal Position

DUAL

Terminal Form

GULL WING

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

625mW

Turn On Delay Time

3.5 ns

FET Type

P-Channel

Rds On (Max) @ Id, Vgs

500m Ω @ 830mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

135pF @ 10V

Gate Charge (Qg) (Max) @ Vgs

3.1nC @ 4.5V

Rise Time

2.9ns

Vgs (Max)

±8V

Fall Time (Typ)

2.9 ns

Continuous Drain Current (ID)

830mA

Threshold Voltage

-700mV

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

20V

Height

780μm

Length

1.7mm

Width

980μm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

ROHS3 Compliant

Lead Free

Teilenummer	Paket	Beschreibung
FDY102PZ	SC-89, SOT-490	MOSFET P-CH 20V 0.83A SC89-3
NTJS4405NT1	6-TSSOP, SC-88, SOT-363	MOSFET N-CH 25V 1A SOT-363
FDY1002PZ	SOT-563, SOT-666	MOSFET 2P-CH 20V 0.83A SC89-6
NTJS4405NT4G	6-TSSOP, SC-88, SOT-363	MOSFET N-CH 25V 1A SOT-363
PMR290XN,115	SC-75, SOT-416	MOSFET N-CH 20V 0.97A SOT416

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What is a MOSFET used for?

The MOSFET is the most common type of transistor today. Their primary use is to control conductivity, or how much electricity can flow, between its source and drain terminals based on the amount of voltage applied to its gate terminal.

What is the basic principle of MOSFET?

The main principle of the MOSFET device is to be able to control the voltage and current flow between the source and drain terminals. It works almost like a switch and the functionality of the device is based on the MOS capacitor. The MOS capacitor is the main part of MOSFET.

What is the advantage of MOSFET?

The main advantage of MOSFET is that there is no gate current i.e. it does not have any input current. It has a very high input impedance due to the insulation layer. It consumes negligible energy in its operation due to a very low leakage current. It has a very high switching speed.